BOWLER1 |
Adsorption of ammonia
on prepared silicon surfaces |
Type |
Theoretical |
#students |
1 |
Orientation |
Why is
the scientific problem of interest at all? It is now possible, using an STM tip, to define
lithographically holes in a hydrogen layer on a silicon surface with atomic
precision, and then to adsorb gases and more silicon. We are
working with a company in the USA who are using this technique to grow
nanostructures of silicon and other materials (e.g. boron and
germanium) with atomic precision, by performing chemical vapout deposition
(CVD) on these holes to grow the structures layer-by- layer. |
How |
How is
the research going to shed light on the given problem?. However, we need to understand
how the precursors will adsorb, decompose, react and move on the surface. Once
these quantities are known, the experiments will be better controlled,
and the precision and placement of the atoms will be enhanced. |
What |
What is the specific
thing that the student will do, and how does it fit inside the overall
project? You will use state-of-the- art electronic structure
techniques to calculate the process of adsorption of ammonia onto holes in
the hydrogen layer, and to investigate the effects of dopants in the surface
on this adsorption. This research will help us
understand how to control the deposition of N onto silicon, either for growth of
nitride nanostructures, or as a contrast to more commonly
used Group V dopants. |
Special Knowledge |
The project is based around computational
simulations, and the student will be expected to learn how to use Unix-based
operating systems as well as density functional theory codes. An
interest in computing and computational and/or theoretical physics would be an
advantage. |
Supervisor |
Dr David Bowler david.bowler@ucl.ac.uk |